TI CSD18512Q5B

TI · FETs & Power MOSFETs · MPN CSD18512Q5B

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Specifications

Gate Charge(Qg)98nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)699pF
Current - Continuous Drain(Id)211A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)256pF
RDS(on)2.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)7.12nF
TypeN-Channel

Technical details

N-Channel 40V 211A 139W Surface Mount VSON-8(5x6)

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