TI · FETs & Power MOSFETs · MPN CSD18511Q5AT
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| Gate Charge(Qg) | 82nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 588pF |
| Current - Continuous Drain(Id) | 159A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 309pF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.85nF |
| Type | N-Channel |
40V 159A 2.4V 104W 2.3mΩ@10V 1 N-channel N-Channel VSONP-8(5x6) Single FETs, MOSFETs RoHS