TI CSD18511Q5A

TI · FETs & Power MOSFETs · MPN CSD18511Q5A

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)452pF
Current - Continuous Drain(Id)159A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)238pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.5nF
TypeN-Channel

Technical details

N-Channel 40V 100A 104W Surface Mount SON-8(5x6)

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