TI · FETs & Power MOSFETs · MPN CSD18511KTTT
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| Gate Charge(Qg) | 63.9nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 591pF |
| Current - Continuous Drain(Id) | 194A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 188W |
| Reverse Transfer Capacitance (Crss@Vds) | 306pF |
| RDS(on) | 2.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.94nF |
| Type | N-Channel |
40V 194A 2.4V 188W 2.6mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS