TI CSD18511KCS

TI · FETs & Power MOSFETs · MPN CSD18511KCS

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Specifications

Gate Charge(Qg)64nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)194A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation188W
RDS(on)2.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.94nF

Technical details

N-Channel 40V 194A 188W Through Hole TO-220

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