TI CSD18510Q5B

TI · FETs & Power MOSFETs · MPN CSD18510Q5B

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Specifications

Gate Charge(Qg)153nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation156W
RDS(on)0.96mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.4nF

Technical details

N-Channel 40V 300A 156W Surface Mount VSON-8(5x6)

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