TI · FETs & Power MOSFETs · MPN CSD18510KTTT
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 153nC@10V |
| Output Capacitance(Coss) | 551pF |
| Current - Continuous Drain(Id) | 274A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 424pF |
| RDS(on) | 2.6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.4nF |
| Type | N-Channel |
40V 274A 2.3V 250W 2.6mΩ@4.5V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS