TI CSD18510KCS

TI · FETs & Power MOSFETs · MPN CSD18510KCS

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Specifications

Gate Charge(Qg)153nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.08nF
Current - Continuous Drain(Id)288A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)551pF
RDS(on)2.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)11.4nF
TypeN-Channel

Technical details

N-Channel 40V 288A 250W Through Hole TO-220

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