TI CSD18509Q5BT

TI · FETs & Power MOSFETs · MPN CSD18509Q5BT

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Specifications

Gate Charge(Qg)150nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)1.07nF
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation195W
RDS(on)1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)354pF
Number1 N-channel
Input Capacitance(Ciss)13.9nF
TypeN-Channel

Technical details

40V 100A 1.8V 195W 1mΩ@10V 1 N-channel N-Channel VSON-CLIP-8(6x5) Single FETs, MOSFETs RoHS

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