TI · FETs & Power MOSFETs · MPN CSD18509Q5BT
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| Gate Charge(Qg) | 150nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 1.07nF |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 195W |
| RDS(on) | 1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 354pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.9nF |
| Type | N-Channel |
40V 100A 1.8V 195W 1mΩ@10V 1 N-channel N-Channel VSON-CLIP-8(6x5) Single FETs, MOSFETs RoHS