TI CSD18504KCS

TI · FETs & Power MOSFETs · MPN CSD18504KCS

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)416pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)10.4pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

N-Channel 40V 100A 115W Through Hole TO-220

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