TI CSD18503Q5A

TI · FETs & Power MOSFETs · MPN CSD18503Q5A

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)510pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)612pF
RDS(on)6.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.64nF
TypeN-Channel

Technical details

N-Channel 40V 19A 120W Surface Mount SON-8(5x6)

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