TI CSD18502Q5B

TI · FETs & Power MOSFETs · MPN CSD18502Q5B

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.17nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)1.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.07nF
TypeN-Channel

Technical details

N-Channel 40V 100A 3.2W Surface Mount VSON-CLIP-8(6x5)

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