TI · FETs & Power MOSFETs · MPN CSD18502KCS
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 212A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 259W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.68nF |
40V 212A 1.8V 259W 2.4mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS