TI CSD18501Q5A

TI · FETs & Power MOSFETs · MPN CSD18501Q5A

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Specifications

Gate Charge(Qg)20nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)725pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.84nF
Vgs±20V

Technical details

40V 100A 1.8V 3.1W 2.5mΩ@10V 1 N-channel N-Channel VSONP-8(4.9x6) Single FETs, MOSFETs RoHS

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