TI · FETs & Power MOSFETs · MPN CSD18501Q5A
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| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 725pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.84nF |
| Vgs | ±20V |
40V 100A 1.8V 3.1W 2.5mΩ@10V 1 N-channel N-Channel VSONP-8(4.9x6) Single FETs, MOSFETs RoHS