TI CSD17581Q5AT

TI · FETs & Power MOSFETs · MPN CSD17581Q5AT

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Specifications

Gate Charge(Qg)25nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)445pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation83W
RDS(on)2.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)195pF
Input Capacitance(Ciss)3.64nF
TypeN-Channel

Technical details

30V 60A 1.7V 83W 2.9mΩ@10V N-Channel DFN-8(4.9x5.8) Single FETs, MOSFETs RoHS

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