TI CSD17581Q3AT

TI · FETs & Power MOSFETs · MPN CSD17581Q3AT

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Specifications

Gate Charge(Qg)25nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)445pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)195pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.64nF
TypeN-Channel

Technical details

N-Channel 30V 60A 63W Surface Mount PDFN-8(3x3.2)

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