TI · FETs & Power MOSFETs · MPN CSD17579Q5AT
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 15.1nC@10V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.1W;36W |
| RDS(on) | 9.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.03nF |
30V 25A 2V 9.7mΩ@10V 1 N-channel VSONP-8(5x6) Single FETs, MOSFETs RoHS