TI CSD17579Q5A

TI · FETs & Power MOSFETs · MPN CSD17579Q5A

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)11.6nC@10V
Output Capacitance(Coss)124pF
Current - Continuous Drain(Id)46A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation36W
RDS(on)8.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 N-channel
Input Capacitance(Ciss)1.03nF
TypeN-Channel

Technical details

30V 46A 1.5V 36W 8.4mΩ@10V 1 N-channel N-Channel VSONP-8(5x6) Single FETs, MOSFETs RoHS

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