TI · FETs & Power MOSFETs · MPN CSD17579Q3AT
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 121pF |
| Current - Continuous Drain(Id) | 39A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 29W |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF |
| RDS(on) | 14.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 998pF |
| Type | N-Channel |
30V 39A 1.9V 29W 14.2mΩ@4.5V 1 N-channel N-Channel VSONP-8(3.3x3.3) Single FETs, MOSFETs RoHS