TI CSD17579Q3A

TI · FETs & Power MOSFETs · MPN CSD17579Q3A

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Specifications

Gate Charge(Qg)5.3nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)93pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)49pF
RDS(on)8.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)998pF
TypeN-Channel

Technical details

N-Channel 30V 20A 2.5W Surface Mount SON-8-EP(3.1x3)

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