TI CSD17578Q5AT

TI · FETs & Power MOSFETs · MPN CSD17578Q5AT

No reviews yet — be the first to review TI CSD17578Q5AT.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)22.3nC@10V
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation3.1W;42W
RDS(on)6.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.51nF

Technical details

30V 25A 1.9V 6.9mΩ@10V 1 N-channel VSONP-8(5x6) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs