TI CSD17578Q3AT

TI · FETs & Power MOSFETs · MPN CSD17578Q3AT

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)22.2nC@10V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation3.2W;37W
RDS(on)7.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.59nF

Technical details

N-Channel 30V 20A 3.2W 37W Surface Mount VSONP-8(3.3x3.3)

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