TI CSD17578Q3A

TI · FETs & Power MOSFETs · MPN CSD17578Q3A

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Specifications

Gate Charge(Qg)22.2nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)134pF
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)73pF
RDS(on)9.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.59nF
TypeN-Channel

Technical details

N-Channel 30V 54A 37W Surface Mount VSONP-8(3.3x3.3)

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