TI CSD17577Q5AT

TI · FETs & Power MOSFETs · MPN CSD17577Q5AT

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)35nC@10V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation3W;53W
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.31nF

Technical details

N-Channel 30V 60A 3W 53W Surface Mount VSONP-8(5x6)

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