TI CSD17577Q3AT

TI · FETs & Power MOSFETs · MPN CSD17577Q3AT

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)35nC@10V
Current - Continuous Drain(Id)83A
Output Capacitance(Coss)270pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation53W
Reverse Transfer Capacitance (Crss@Vds)103pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.31nF
TypeN-Channel

Technical details

N-Channel 30V 83A 53W Surface Mount VSONP-8(3.3x3.3)

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