TI · FETs & Power MOSFETs · MPN CSD17575Q3T
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| Gate Charge(Qg) | 30nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 2.8W;108W |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.42nF |
N-Channel 30V 60A 2.8W 108W Surface Mount VSON-8(3.3x3.3)