TI CSD17575Q3

TI · FETs & Power MOSFETs · MPN CSD17575Q3

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Specifications

Gate Charge(Qg)23nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)511pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)204pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.42nF
TypeN-Channel

Technical details

N-Channel 30V 60A 2.8W Surface Mount VSON-CLIP-8(3.3x3.3)

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