TI CSD17573Q5B

TI · FETs & Power MOSFETs · MPN CSD17573Q5B

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Specifications

Gate Charge(Qg)64nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation195W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)1.45mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)9nF
TypeN-Channel

Technical details

N-Channel 30V 100A 195W Surface Mount PDFN-8(5x6)

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