TI · FETs & Power MOSFETs · MPN CSD17570Q5BT
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 121nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.89nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 3.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.14nF |
| RDS(on) | 0.69mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.6nF |
30V 100A 1.9V 3.2W 0.69mΩ@10V 1 N-channel N-Channel VSON-8(5x6) Single FETs, MOSFETs RoHS