TI CSD17570Q5B

TI · FETs & Power MOSFETs · MPN CSD17570Q5B

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Specifications

Gate Charge(Qg)93nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1.89nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)1.14nF
RDS(on)0.56mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13.6nF
TypeN-Channel

Technical details

N-Channel 30V 100A 3.2W Surface Mount SON-8(5x6)

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