TI · FETs & Power MOSFETs · MPN CSD17559Q5T
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 39nC@4.5V |
| Current - Continuous Drain(Id) | 257A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 113pF |
| RDS(on) | 1.15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.2nF |
| Type | N-Channel |
30V 257A 1.7V 96W 1.15mΩ@10V 1 N-channel N-Channel VSON-8(5x6) Single FETs, MOSFETs RoHS