TI CSD17559Q5

TI · FETs & Power MOSFETs · MPN CSD17559Q5

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Specifications

Gate Charge(Qg)39nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)2.314nF
Current - Continuous Drain(Id)257A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)113pF
RDS(on)1.15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.2nF
TypeN-Channel

Technical details

N-Channel 30V 257A 96W Surface Mount VSON-CLIP-8(6x5)

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