TI CSD17556Q5B

TI · FETs & Power MOSFETs · MPN CSD17556Q5B

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Specifications

Gate Charge(Qg)39nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.02nF

Technical details

30V 100A 3.1W Surface Mount VSON-CLIP-8(6x5)

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