TI · FETs & Power MOSFETs · MPN CSD17556Q5B
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| Gate Charge(Qg) | 39nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.02nF |
30V 100A 3.1W Surface Mount VSON-CLIP-8(6x5)