TI CSD17555Q5A

TI · FETs & Power MOSFETs · MPN CSD17555Q5A

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Specifications

Gate Charge(Qg)23nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)87pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.65nF

Technical details

N-Channel 30V 100A 3W Surface Mount SON-8(5x6)

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