TI CSD17553Q5A

TI · FETs & Power MOSFETs · MPN CSD17553Q5A

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Specifications

Gate Charge(Qg)21.5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)762pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.252nF
TypeN-Channel

Technical details

30V 100A 1.9V 3.1W 4mΩ@4.5V 1 N-channel N-Channel PDFN-8(5.2x6.2) Single FETs, MOSFETs RoHS

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