TI CSD17552Q3A

TI · FETs & Power MOSFETs · MPN CSD17552Q3A

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@4.5V
Current - Continuous Drain(Id)15A;60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation2.6W
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.05nF

Technical details

N-Channel 30V 15A 60A 2.6W Surface Mount VSONP-8(3.3x3.3)

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