TI CSD17551Q3A

TI · FETs & Power MOSFETs · MPN CSD17551Q3A

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6nC@4.5V
Current - Continuous Drain(Id)48A
Output Capacitance(Coss)317pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.6W
RDS(on)7.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)31pF
Number1 N-channel
Input Capacitance(Ciss)1.37nF
TypeN-Channel

Technical details

30V 48A 1.6V 2.6W 7.8mΩ@10V 1 N-channel N-Channel VSONP-8(3.3x3.3) Single FETs, MOSFETs RoHS

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