TI · FETs & Power MOSFETs · MPN CSD17510Q5A
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| Gate Charge(Qg) | 8.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 20A;100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 5.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.25nF |
N-Channel 30V 20A 100A 3W Surface Mount VSONP-8(5x6)