TI CSD17507Q5AT

TI · FETs & Power MOSFETs · MPN CSD17507Q5AT

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)2.8nC@4.5V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation39W
RDS(on)16.1mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)30pF
Input Capacitance(Ciss)530pF
TypeN-Channel

Technical details

30V 65A 2.1V 39W 16.1mΩ@4.5V N-Channel VSONP-8(4.9x6) Single FETs, MOSFETs RoHS

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