TI CSD17507Q5A

TI · FETs & Power MOSFETs · MPN CSD17507Q5A

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)2.8nC@4.5V
Current - Continuous Drain(Id)65A
Output Capacitance(Coss)350pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation39W
RDS(on)9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-channel
Input Capacitance(Ciss)530pF
TypeN-Channel

Technical details

30V 65A 1.6V 39W 9mΩ@10V 1 N-channel N-Channel VSONP-8(5x6) Single FETs, MOSFETs RoHS

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