TI CSD17506Q5A

TI · FETs & Power MOSFETs · MPN CSD17506Q5A

No reviews yet — be the first to review TI CSD17506Q5A.

Specifications

Gate Charge(Qg)11nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1.12nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)5.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.65nF
TypeN-Channel

Technical details

N-Channel 30V 100A 3.2W Surface Mount TDSON-8(5x6)

Related FETs & Power MOSFETs