TI CSD17501Q5A

TI · FETs & Power MOSFETs · MPN CSD17501Q5A

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Specifications

Configuration-
Gate Charge(Qg)13.2nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1.7nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.63nF

Technical details

N-Channel 30V 100A 3.2W Surface Mount SON-8(5x6)

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