TI CSD17484F4T

TI · FETs & Power MOSFETs · MPN CSD17484F4T

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)2.04nC@8V
Output Capacitance(Coss)57pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)2.9pF
RDS(on)270mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)195pF
TypeN-Channel

Technical details

N-Channel 30V 3A 500mW Surface Mount PicoStar-3

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