TI CSD17483F4T

TI · FETs & Power MOSFETs · MPN CSD17483F4T

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)1.3nC@4.5V
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation500mW
RDS(on)240mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)190pF

Technical details

N-Channel 30V 1.5A 500mW Surface Mount PicoStar-3

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