TI CSD17382F4

TI · FETs & Power MOSFETs · MPN CSD17382F4

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)2.7nC@4.5V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
RDS(on)64mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)347pF

Technical details

30V 2.3A 1.2V 500mW 64mΩ@8V 1 N-channel PicoStar-3 Single FETs, MOSFETs RoHS

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