TI CSD17318Q2

TI · FETs & Power MOSFETs · MPN CSD17318Q2

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6nC@4.5V
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation16W
RDS(on)15.1mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)879pF

Technical details

N-Channel 30V 25A 16W Surface Mount WSON-6(2x2)

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