TI CSD17313Q2T

TI · FETs & Power MOSFETs · MPN CSD17313Q2T

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Specifications

Gate Charge(Qg)2.7nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation17W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)42mΩ@3V
Number1 N-channel
Input Capacitance(Ciss)340pF
TypeN-Channel

Technical details

N-Channel 30V 19A 17W Surface Mount SON-8(2x2)

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