TI · FETs & Power MOSFETs · MPN CSD17313Q2Q1T
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 2.7nC@4.5V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 2.4W;17W |
| RDS(on) | 30mΩ@8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 340pF |
30V 5A 1.8V 30mΩ@8V 1 N-channel WSON-6(2x2) Single FETs, MOSFETs RoHS