TI CSD17313Q2

TI · FETs & Power MOSFETs · MPN CSD17313Q2

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)2.7nC@4.5V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation2.3W
RDS(on)30mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)340pF

Technical details

N-Channel 30V 5A 2.3W Surface Mount WSON-6(2x2)

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