TI · FETs & Power MOSFETs · MPN CSD17310Q5A
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| Gate Charge(Qg) | 11.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 21A;100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 5.1mΩ@8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.56nF |
N-Channel 30V 21A 100A 3.1W Surface Mount VSONP-8(5x6)