TI CSD17310Q5A

TI · FETs & Power MOSFETs · MPN CSD17310Q5A

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Specifications

Gate Charge(Qg)11.6nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)21A;100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation3.1W
RDS(on)5.1mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)1.56nF

Technical details

N-Channel 30V 21A 100A 3.1W Surface Mount VSONP-8(5x6)

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